A1 Hybrid Colorimetric Sensors

Project Leaders

Prof. Dr. Max Lemme, Prof. Dr. Otmar Loffeld

Initial Situation

Today's image based systems applied in civil security are almost exclusively based on one of two image sensors: CMOS or CCD, which work either mono- or multi chromatically. In the case of CCD sensors, for example, four different photo diodes are gathered into a single image point. Generally, the color separation is achieved through a color-filter array (Bayer-Pattern), attached to the sensor matrix, with three or four different color filters and corresponding resolution reduction for the individual colors. The spectral sensitivity of the semi-conductor detector is non-changeable and determined by the production process.

Aims and Work Program

The aim of this research is the development of planar integrable colorimetric semiconductor sensors for the NUV / VIS / NIR areas. In order to achieve this, two approaches will be pursued in phase two of the project: On the one hand the development and examination of 2-terminal amorphous Silicium (a-Si) semiconductor elements is pursued, with the most continuously tunable spectral sensitivity possible. On the other hand hybrid graph-based technologies and 3-terminal a-Si devices are developed, which facilitate the extension of the spectral field, a parallel reading of several spectral channels and improved differentiation.

Surface of the in-situ structured ZnO:Al front contact.	Deposition scheme of an optimized color recognition variospectral p–i–n photo detectors